TPD and ITPD study of materials used as chemoresistive gas sensors

Solid State Ionics

Volumn 180, Issue 36-39, 2009, Pages 1545-1552

  Puzzovio, D ^a,b   Carotta, M C ^a   Cervi, A ^a,b   El Hachimi, A ^c   Joly, J P ^c   Gaillard, F ^c   Guidi, V ^a,b  

^a UNIVERSITY OF FERRARA   (Italy)

^b NFN section of Ferrara   (Italy)

^c UNIVERSITÉ LYON 1   (France)

Author keywords

Gas sensors; ITPD; Metal oxide semiconductors; Oxygen desorption; TPD

Indexed keywords

APPARENT ACTIVATION ENERGY; CHEMORESISTIVE GAS SENSORS; COMPACT MONOLAYERS; DIFFERENTIAL FORMS; GAS SENSING; GAS SENSORS; IN-VACUUM; INTERMITTENT TEMPERATURE; METAL OXIDE SEMICONDUCTOR; OXYGEN DESORPTION; TIO;

ACTIVATION ENERGY; ARRHENIUS PLOTS; GAS DETECTORS; GAS SENSING ELECTRODES; MONOLAYERS; OXYGEN; SENSORS; TIN;

TEMPERATURE PROGRAMMED DESORPTION;

EID: 70549101142     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2009.10.007     Document Type: Article

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