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Volumn 518, Issue 5, 2009, Pages 1543-1548

Influence of incident ion beam angle on dry etching of silica sub-micron particles deposited on Si substrates

Author keywords

Dry etching; Langmuir Blodgett technique; Nanopatterning; Silica submicroparticle; Sol gel

Indexed keywords

2-D CRYSTALS; ALKOXIDE PRECURSOR; CLOSE PACKED STRUCTURES; COLLOIDAL CRYSTALS; COLLOIDAL LITHOGRAPHY; ETCHING PROCESS; INCIDENT BEAMS; ION BEAM ANGLE; LANGMUIR BLODGETT TECHNIQUES; LARGE SURFACE AREA; MONOLAYER FILM; NANO-STRUCTURED; NANO-STRUCTURING; NANOPATTERNING; OBLIQUE INCIDENCE; PARTICLE FILMS; PARTICLE LAYER; PHYSICAL SPUTTERING; ROOM TEMPERATURE; SELF-ASSEMBLED; SHADOWING EFFECTS; SI SUBSTRATES; SUB-MICRON PARTICLES; SUBSTRATE ETCHING;

EID: 70449698475     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.077     Document Type: Article
Times cited : (12)

References (34)
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    • 0242440258 scopus 로고    scopus 로고
    • Lopez C. Adv. Mater. 15 20 (2003) 1679
    • (2003) Adv. Mater. , vol.15 , Issue.20 , pp. 1679
    • Lopez, C.1
  • 13


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.