Formation of in-induced superstructural phases on Si(111)7 × 7 reconstructed surface

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 9, 2009, Pages 5417-5420

  Govind, ^a   Jithesh, K ^a,b   Kumar, Mahesh ^a   Shivaprasad, S M ^a,b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

Auger electron spectroscopy; Low energy electron diffraction; Super structural phases

Indexed keywords

ADSORPTION BEHAVIOR; CHARACTERISTIC PROPERTIES; DESORPTION STUDY; EXCITING FIELD; GROUP III; HIGHER TEMPERATURES; IN-SITU; IN/SI INTERFACE; ISLAND FORMATION; LAYER-BY LAYER MODE; NANO-PHASE; P-DOPING; RECONSTRUCTED SURFACES; SI (1 1 1); SI SURFACES; STEP-EDGE; SUBMONOLAYER; SUPER STRUCTURAL PHASES; SURFACE-SENSITIVE TECHNIQUE; THREE-DIMENSIONAL ISLANDS;

ADSORPTION; ATOMS; AUGERS; BALLOONS; DESORPTION; DIFFRACTION; ELECTRONIC PROPERTIES; ELECTRONS; GROWTH KINETICS; INDIUM; IONIC LIQUIDS; LOW ENERGY ELECTRON DIFFRACTION; PHASE INTERFACES; SILICON; TWO DIMENSIONAL;

AUGER ELECTRON SPECTROSCOPY;

EID: 70350312774     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1171     Document Type: Conference Paper

References (23)

1. Johannes V. Barth, G. Costantini, and K. Kern, Nature 437, 29 (2005).
2. G. Costantini, A. Rastelli, C. Manzano, R. Songmuang, O. G. Schmidt, K. Kern, and H. von Kanel, Appl. Phys. Lett. 85, 5673 (2004).
3. F. J. Himpsel, J. L. McChesney, J. N. Crain, A. Kirakosian, V. Perez-Dieste, N. L. Abbott, Y.-Y. Luk, P. F. Nealey, and D. Y. Petrovykh, J. Phys. Chem. B 108, 14484 (2004).
4. P. Gambardella, M. Blanc, H. Brune, K. Kuhnke, and K. Kern, Phys. Rev. B 61, 2254 (2000).
5. K. Takayanagi, Y. Tanishiro, S. Takahashi, and M. Takahashi, Surf. Sci. 164, 367 (1985).
6. Y. Sakamoto and J. Kanamori, Surf. Sci. 242, 119 (1991).
7. J. J. Lander and J. Morrison, J. Appl. Phys. 36, 1706 (1965).
8. Y. Yagi, A. Yoshimori, K. Kakitani, and H. Kaji, Surf. Sci. 601, 1642 (2007).
9. J. Nogami, S.-I. Park, and C. F. Quate, Phys. Rev. B 36, 6221 (1987).
10. J. R. Ann, J. H. Byun, J. K. Kim, and H. W. Yoem, Phys. Rev. B 75, 033313 (2007).
11. J. Wang, H. Wu, R. So, Y. Liu, M. H. Xie, and S. Y. Tong, Phys. Rev. B 72, 245324 (2005).
12. T. Uchihashi and U. Ramsperger, Appl. Phys. Lett. 80, 22 4169 (2002).
13. S. Mizunu, Y. O. Mizuno, and H. Tochihara, Phys. Rev. B 67, 195410 (2003).
14. M. S. Finney, C. Norris, and P. B. Howes, Surf. Sci. 277, 330 (1992).
15. H. Öfner, S. L. Surnev, Y. Shapira, and F. P. Netzer, Phys. Rev. B 48, 10940 (1993).
16. M. Sun, C. Hu, R. G. Zhao, and H. Ji, Thin Solid Films 489, 111 (2005).
17. V. K. Paliwal, A. G. Vedeshwar, and S. M. Shivaprasad, Phys. Rev. B 66, 245404 (2002).
18. Mahesh Kumar, Govind, V. K. Paliwal, and S. M. Shivaprasad, Surf. Sci. 600, 2745 (2006).
19. V. K. Paliwal, Mahesh Kumar, and S. M. Shivaprasad, Surf. Sci. 585, 5358 (2005).
20. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).
21. Y. Enta, S. Suzuki, and S. Kono, Phys. Rev. B 39, 5524 (1989).
22. C. Argile and G. E. Rhead, Surf. Sci. Rep. 10, 277 (1989).
23. D. E. Ramaker, F. L. Hutson, N. H. Jurler, and W. N. Mei, Phys. Rev. B 33, 2547 (1986).