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Volumn 518, Issue 5, 2009, Pages 1415-1418
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Effects of oxygen flow ratios and annealing temperatures on Raman and photoluminescence of titanium oxide thin films deposited by reactive magnetron sputtering
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Author keywords
Photoluminescence; Raman; Sputtering; Thin film; Titanium oxide
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Indexed keywords
ANATASE PHASE;
ANNEALING TEMPERATURES;
CRYSTALLINE PEAKS;
DEEP LEVEL EMISSION;
DIRECT-CURRENT;
ELECTRON HOLE PAIRS;
GAUSSIAN PEAKS;
OXYGEN FLOW RATIOS;
PL SPECTRA;
RAMAN;
RAMAN INTENSITIES;
RAMAN SPECTRA;
REACTIVE MAGNETRON SPUTTERING;
RUTILE AND ANATASE;
RUTILE PHASIS;
SI (100) SUBSTRATE;
TIO;
TITANIUM OXIDE THIN FILMS;
VISIBLE LIGHT REGION;
XRD;
AMORPHOUS FILMS;
LEAKAGE (FLUID);
LIGHT;
MAGNETRONS;
OXIDE FILMS;
OXIDE MINERALS;
OXYGEN;
OXYGEN VACANCIES;
PHOTOLUMINESCENCE;
PHOTOLUMINESCENCE SPECTROSCOPY;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
RAPID THERMAL ANNEALING;
RAPID THERMAL PROCESSING;
SEMICONDUCTING SILICON COMPOUNDS;
THIN FILM DEVICES;
THIN FILMS;
TITANIUM;
TITANIUM DIOXIDE;
VACANCIES;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
TITANIUM OXIDES;
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EID: 70449461507
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.09.076 Document Type: Article |
Times cited : (30)
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References (22)
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