A CMOS accelerometer using bondwire inertial sensing

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2009, Pages 64-65

  Liao, Y T ^a   Biederman, W ^a   Otis, B ^a  

^a University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STABILITY; BONDWIRE; CMOS PROCESSS; EXTERNAL COMPONENTS; INERTIAL SENSING; INERTIAL SENSOR; MUTUAL INDUCTANCE; READOUT CIRCUITRY;

ACCELEROMETERS; INDUCTANCE;

VLSI CIRCUITS;

EID: 70449379051     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. D. Fang, H. Qu and H. Xie, "A 1 mW dual-chopper amplifier for a a 50 μg/√Hz a monolithic CMOS-MEMS capacitive accelerometer," in Proc. Symp. VLSI Circuits 2006, pp 59-60.
2. L. He, Y. P. Xu and M. Palaniapan, "A CMOS readout circuit for SOI resonant accelerometer with 4-μg bias stability and 20 μg/√Hz resolution," IEEE J. Solid-State Circuits, vol. 43, no. 6, pp. 1480-1490, June 2008.
3. H. A. Schafft, "Testing and fabrication of wire-bond electrical connections: a comprehensive survey," U.S. National Bureau of Standards, 1973.