False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 732-735

  Verzellesi, G ^a   Faqir, M ^a   Chini, A ^a   Fantini, F ^a   Meneghesso, G ^b   Zanoni, E ^b   Danesin, F ^b   Zanon, F ^b   Rampazzo, F ^b   Marino, F A ^b   Cavallini, A ^c   Castaldini, A ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Deep levels; DLTS; GaN; Gate lag; HEMT; Traps

Indexed keywords

DEEP LEVELS; DLTS; GAN; GATE LAG; HEMT; TRAPS;

CHARGE TRAPPING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; GALLIUM ALLOYS; GALLIUM NITRIDE; RELIABILITY; SEMICONDUCTING GALLIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70449100708     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173339     Document Type: Conference Paper

References (3)

1. G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, E. Zanoni, "Reliability of GaN High-Electron- Mobility Transistors: State of the Art and Perspectives", IEEE Transactions on Device and Materials Reliability, vol. 8(2), pp. 332-343, 2008.
2. M. Faqir, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Cavallini, A. Castaldini, N. Labat, A. Touboul, C. Dua, "Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs", Microelectronics Reliability, vol. 47, pp. 1639-1642, 2007 [Proc. of ESREF 2007].
3. S.R. Blight, R.H. Wallis, and H. Thomas, "Surface influence on the conductance DLTS spectra of GaAs MESFET's", IEEE Trans. Electr. Dev., vol. 33, pp. 1447-1453, 1986.