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Solid State Communications

Volumn 150, Issue 1-2, 2010, Pages 27-29

Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect

(5) Kim, Jungtaek a Lee, Sangyeop a Lee, Sanghoon a Liu, X b Furdyna, J K b

a Korea University (South Korea)

b UNIVERSITY OF NOTRE DAME (United States)

Author keywords

A. Ferromagnetism; A. Semiconductor; D. Anisotropy; E. Planar Hall effect

Indexed keywords

A. FERROMAGNETISM; A. SEMICONDUCTOR; ANGULAR DEPENDENCE; APPLIED MAGNETIC FIELDS; D. ANISOTROPY; DOMAIN PINNING; E. PLANAR HALL EFFECT; EASY AXIS; FERROMAGNETIC FILMS; FIELD STRENGTHS; MAGNETIC FREE ENERGY; PINNING FIELD; PLANAR HALL EFFECT;

ANISOTROPY; CRITICAL CURRENTS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GYRATORS; HALL EFFECT; MAGNETIC DOMAINS; MAGNETIZATION REVERSAL; MAGNETS; MANGANESE; MANGANESE COMPOUNDS;

MAGNETIC FIELD EFFECTS;

EID: 70449084789 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2009.10.014 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.