Effect of MnAs/GaAs(001) film accommodations on the phase-transition temperature

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2250-2252

  Iikawa, F ^a   Brasil, M J S P ^a   Couto, O D D ^a   Adriano, C ^a   Giles, C ^b   Daweritz L ^c  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; HEATING; HYDROSTATIC PRESSURE; LATTICE CONSTANTS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; STRAIN; SUPERCONDUCTING TRANSITION TEMPERATURE; X RAY DIFFRACTION;

BEAM EQUIVALENT PRESSURES; CRYSTAL DISTORTION; CRYSTAL REFLECTIONS; TEMPERATURE DEPENDENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 7044286041     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1791739     Document Type: Article

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