Internal transitions of charged excitons in AlGaAs/GaAs lateral fluctuation quantum dots

Acta Physica Polonica A

Volumn 106, Issue 3, 2004, Pages 383-393

  Meining, C J ^a   Whiteside, V R ^a   Mccombe, B D ^a   Nickel, H A ^a   Petrou, A ^a   Tischler, J G ^b   Bracker, A S ^b   Gammon, D ^b   Dzyubenko, A B ^a,c  

^a UNIVERSITY AT BUFFALO   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c CALIFORNIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHARGE COUPLED DEVICES; ELECTRON CYCLOTRON RESONANCE; EXCITONS; LASER BEAMS; LOW TEMPERATURE OPERATIONS; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

COULOMB CORRELATION ENERGIES; MAGNETIC TRANSLATIONAL INVARIANCE; MAGNETO-PHOTOLUMINESCENCE (MPL); OPTICALLY DETECTED RESONANCE (ODR) SPECTRA; TRIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 7044253589     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.106.383     Document Type: Conference Paper

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