Ferroelectric properties of BaMgF4 films grown on Si(100), (111), and Pt(111)/SiO2/Si(100) structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1525-1530

  Aizawa, Koji ^a   Ichiki, Tatsuya ^a   Okamoto, Tomoyuki ^a   Tokumitsu, Eisuke ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

BaMgF4 films; Ferroelectric properties; MFS FET; Pt(111) SiO2 Si(100) structures; Si substrates

Indexed keywords

BARIUM COMPOUNDS; CHARACTERIZATION; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; FILM GROWTH; HYSTERESIS; POLARIZATION; REMANENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

BARIUM MAGNESIUM FLUORIDE FILMS; FERROELECTRIC POLARIZATION; METAL FERROELECTRIC SILICON FIELD EFFECT TRANSISTORS; REMANENT POLARIZATION; THRESHOLD VOLTAGE;

DIELECTRIC FILMS;

EID: 0030080402     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1525     Document Type: Article

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