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Volumn 80, Issue 12, 2009, Pages

Correction of systematic errors in scanning tunneling spectra on semiconductor surfaces: The energy gap of Si(111)- 7×7 at 0.3 K

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EID: 70350704896     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.125326     Document Type: Article
Times cited : (15)

References (20)
  • 17
    • 70350708192 scopus 로고    scopus 로고
    • A density of surface states near EF of about 1015 cm-2 eV-1 limits the energy shifts caused by an electric field of 109 V m-1 applied outside the surface to less than 20 meV. For Si(111)- (7×7), see note 19 of Ref..
    • A density of surface states near EF of about 1015 cm-2 eV-1 limits the energy shifts caused by an electric field of 109 V m-1 applied outside the surface to less than 20 meV. For Si(111)- (7×7), see note 19 of Ref..
  • 19
    • 33646282806 scopus 로고
    • 10.1103/PhysRevLett.60.1049
    • R. Wolkow and Ph. Avouris, Phys. Rev. Lett. 60, 1049 (1988). 10.1103/PhysRevLett.60.1049
    • (1988) Phys. Rev. Lett. , vol.60 , pp. 1049
    • Wolkow, R.1    Avouris, Ph.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.