Precursors' order effect on the properties of sulfurized Cu 2ZnSnS4 thin films

Semiconductor Science and Technology

Volumn 24, Issue 10, 2009, Pages

  Fernandes, P A ^a,b   Salome P M P ^a   Da Cunha, A F ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; ABSORPTION EDGES; AVERAGE SURFACE ROUGHNESS; BAND GAP ENERGY; BAND-GAP VALUES; BEFORE AND AFTER; COPPER PRECURSORS; DC MAGNETRON SPUTTERING; DC SPUTTERING; DIFFUSE REFLECTANCE; DIFFUSE REFLECTANCE MEASUREMENTS; HIGH QUALITY; HOT POINT; MAJORITY CARRIERS; METALLIC PRECURSOR; P TYPE SEMICONDUCTOR; PREFERENTIAL GROWTH ORIENTATION; SEM/EDS ANALYSIS; STYLUS PROFILOMETRY; XRD; XRD SPECTRA;

ENERGY GAP; PHOTOVOLTAIC CELLS; PROFILOMETRY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; REFLECTION; REFLECTOMETERS; SEMICONDUCTOR GROWTH; SOLAR ABSORBERS; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

OPTICAL PROPERTIES;

EID: 70350662767     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/10/105013     Document Type: Article

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