Stacked boron doped poly-crystalline silicon-germanium layers: An excellent MEMS structural material

Materials Research Society Symposium Proceedings

Volumn 1075, Issue , 2008, Pages 7-12

  Claes, Gert ^a,b   Van Barel, Gregory ^a,c   Van Hoof, Rita ^a   Bois, Bert Du ^a   Gromova, Maria ^a   Verbist, Agnes ^a   Van Der Donck, Tom ^b   Decoutere, Stefaan ^a   Celis, Jean Pierre ^b   Witvrouw, Ann ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UHasselt   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTALLINE MATERIALS; GERMANIUM; SILICON;

BORON-DOPED; HIGH GROWTH RATE; LOW RESISTIVITY; POLY-CRYSTALLINE SILICON; STRESS COMPENSATION; STRESS GRADIENT; STRUCTURAL LAYERS; THICK LAYERS;

GROWTH RATE;

EID: 70350634263     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1075-j05-02     Document Type: Conference Paper

References (6)

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6. G. Bryce, S. Seven, B. Du Bois, M. Willegems, G. Claes, R. Van Hoof, L. Haspeslagh, S. Decoutere and A. Witvrouw, Abstract submitted for ECSSiGe 2008 conference