Surface-mode lifetime and the terahertz transmission of subwavelength hole arrays

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 11, 2009, Pages

  Isaac, T H ^a   Barnes, W L ^a   Hendry, E ^a  

^a UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350595891     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.115423     Document Type: Article

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31. At 4 K, well below the donor ionization energies, it is possible to perform a simple calculation from Kittel chapter 8, of the carrier concentration (n) in the silicon using the formula n= (n0 Nd) 1/2 exp (- Ed /2 kB T), dependent on the impurity concentration Nd, ionization energy of the impurities Ed and n0 =2 (me kB T/2π) 3/2. Using a simple Drude fit of our complex permittivity in Fig. 5, we estimate that the charge carrier concentration in the silicon is approximately 1021 at room temperature; the temperature dependence indicates that this concentration should decrease to nearly nil at 4.2 K.