TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates

Journal of Microscopy

Volumn 236, Issue 2, 2009, Pages 115-118

  DLuzewski P ^a   Sadowski, J ^a,b   Kret, S ^a   Dabrowski J ^a   Sobczak, K ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b MAX IV LABORATORY   (Sweden)

Author keywords

GaMnAs; MBE; Nanowires; TEM

Indexed keywords

CRYSTAL STRUCTURE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MANGANESE; MOLECULAR BEAM EPITAXY; NANOWIRES; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

BRANCHING STRUCTURES; CRYSTALS STRUCTURES; HIGH MN; MN CONCENTRATIONS; MOLECULAR-BEAM EPITAXY; TEM; ZINC BLENDE; [110] DIRECTION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM; MANGANESE; NANOWIRE;

CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); CONFERENCE PAPER; CRYSTAL STRUCTURE; PRIORITY JOURNAL; TRANSMISSION ELECTRON MICROSCOPY;

EID: 70350520386     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2009.03255.x     Document Type: Conference Paper

References (12)

1. xAs/piezoelectric actuator hybrids: a model system for magnetoelastic magnetization manipulationm. Phys. Rev. B 78, 045203(1) 045203(14).
2. Chen W., Yao H., Tzang C., Zhu J., Yang M. Lee S.T. (2006) Silicon nanowires for high-sensitivity glucose detection. Appl. Phys. Lett. 88, 213104(1) 213104(3).
3. Chiba, D., Sawicki, M., Nishitani, Y., Nakatani, Y., Matsukura, F. Ohno, H. (2008) Magnetization vector manipulation by electric fields. Nature 455, 515 518.
4. Duan X., Huang Y., Cui Y., Wang, J. Lieber C.M. (2001) Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409, 66 69. (Pubitemid 32098623)
5. Hashimoto, Y., Kobayashi, S. Munekata, H. (2008) Photoinduced precession of magnetization in ferromagnetic (Ga,Mn)As. Phys. Rev. Lett. 100, 067202(1) 067202(4).
6. Hiruma K., Yazawa M., et al 1993) GaAs free-standing quantum-size wires. J. Appl. Phys. 74, 3162 3171.
7. Liao L., Lu H.B., Li J.C., He H., Wang D.F., Fu D.J., Liu C. Zhang W.F. (2007) Size dependence of gas sensitivity of ZnO nanorods. J. Phys. Chem. 111, 1900 1903.
8. Overby, M., Chernyshov, A., Rokhinson, L.P., Liu, X. Furdyna, J.K. (2008) GaMnAs-based hybrid multiferroic memory device. Apl. Phys. Lett. 92, 192501(1) 192501(3).
9. Sadowski, J., Dłuzewski, P., Kret, S., et al 2007) GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions. Nano Lett. 7, 2724 2728.
10. Thelander C, Nilsson H.A., Jensen L.E. Samuelson L. (2005) Nanowire single-electron memory. Nano Lett. 5, 635 638.
11. Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., Molnar, S.V., Roukes, M.L., Chtchelkanova, A.Y. Treger, D.M 2001) Spintronics: a spin-based electronics vision for the future. Science 294, 1488 1495.
12. Wunderlich, J., Jungwirth, T., Kaestner, B., et al 2006) Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor. Phys. Rev. Lett. 97, 077201(1) 077201(4).