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Volumn 1035, Issue , 2008, Pages 110-115
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Effect of growth conditions on defect-related photoluminescence in ZnO thin films grown by plasma assisted MBE
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DEFECT BANDS;
EXCITONIC EMISSION;
GROWTH CONDITIONS;
LUMINESCENCE PROPERTIES;
NEAR BAND EDGE;
OXYGEN PLASMAS;
PEAK POSITION;
PHOTOLUMINESCENCE SPECTRUM;
PL SPECTRA;
PLASMA ASSISTED MBE;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
RF-POWER;
SPECTRAL RANGE;
ZNO FILMS;
ZNO THIN FILM;
CRYSTAL GROWTH;
EMISSION SPECTROSCOPY;
GALLIUM NITRIDE;
IONS;
LEAKAGE (FLUID);
LIGHT EMISSION;
METALLIC FILMS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
OXYGEN;
PHOTOLUMINESCENCE;
PLASMAS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING ZINC COMPOUNDS;
ZINC;
ZINC OXIDE;
PLASMA DIAGNOSTICS;
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EID: 70350326025
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (9)
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