Carrier compensation mechanism of highly conductive anatase Ti 0.94Nb0.06O2 epitaxial thin films

Materials Research Society Symposium Proceedings

Volumn 1074, Issue , 2008, Pages 41-45

  Nogawa, Hiroyuki ^a   Hitosugi, Taro ^a   Kamisaka, Hideyuki ^a   Yamashita, Kouichi ^a   Chikamatsu, Akira ^a   Yoshimatsu, Kouhei ^a   Kumigashira, Hiroshi ^a   Oshima, Masaharu ^a   Nadao, Syoichiro ^b   Furubayashi, Yutaka ^b   Hirose, Yasushi ^a   Shimada, Toshihiro ^a   Hasegawa, Tetsuya ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONDUCTIVE FILMS; EPITAXIAL GROWTH; NIOBIUM COMPOUNDS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; TITANIUM DIOXIDE;

ACCEPTOR STATE; CARRIER COMPENSATION; ELECTRICAL CONDUCTION; ELECTRON CARRIER; EPITAXIAL THIN FILMS; INTERSTITIAL OXYGEN; POST ANNEALING; RESONANT PHOTOEMISSION SPECTROSCOPY;

THIN FILMS;

EID: 70350325577     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1074-i05-08     Document Type: Conference Paper

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