Single crystal growth of nanoporous C12A7:e- by controlling melt state

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 12, 2009, Pages 7345-7349

  Yoon, S G ^a   Kim, S W ^a   Yoon, D H ^b   Hirano, M ^a   Hosono, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Sungkyunkwan University   (South Korea)

Author keywords

Built in nanostructure; C12A7 electride; Floating zone method; Nanoporous C12a7:0 2

Indexed keywords

BUILT-IN NANOSTRUCTURE; C12A7 ELECTRIDE; ELECTRIDES; ELECTRON CONCENTRATION; ELECTRON-DOPED; FLOATING ZONE METHOD; LOCAL STRUCTURE; MELT STATE; NANO-POROUS; NANOPOROUS C12A7:0 2-; POLYCRYSTALLINE; QUANTUM DOT STRUCTURE; SINGLE CRYSTAL SEEDS; SOLIDIFICATION PROCESS;

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON EMISSION; ELECTRONS; GRAIN BOUNDARIES; NANOSTRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

SINGLE CRYSTALS;

EID: 70350241521     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1747     Document Type: Conference Paper

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