First-principles calculations of the electronic structure and Mössbauer parameters of Sb-doped SnO2

Solid State Communications

Volumn 149, Issue 47-48, 2009, Pages 2202-2206

  Yahla, H ^a   Boukra, A ^a   Belhakem, M ^a   Lippens, P E ^b  

^a UNIVERSITY OF MOSTAGANEM   (Algeria)

^b UNIVERSITÉ DE MONTPELLIER   (France)

Author keywords

A: Semiconductors; C: Impurities in semiconductors; D: Electronic band structure; E: Nuclear resonances

Indexed keywords

A: SEMICONDUCTORS; C: IMPURITIES IN SEMICONDUCTORS; D: ELECTRONIC BAND STRUCTURE; E: NUCLEAR RESONANCES; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES CALCULATION; LOCAL ELECTRONIC STRUCTURES; NEAREST NEIGHBOUR; OXIDATION STATE; P CHARACTERS; SB-DOPED SNO; SUPER CELL;

ANTIMONY; BAND STRUCTURE; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONIC PROPERTIES; MOLYBDENUM; OXYGEN; RESONANCE; SOLID STATE PHYSICS; TIN;

ELECTRONIC STRUCTURE;

EID: 70350106531     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.09.010     Document Type: Article

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