The impact of interference on multi-level-cell applications in scaled nitride-storage flash memory

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 124-125

  Yang, I C ^a   Chang, Y W ^a   Wu, G W ^a   Chen, P C ^a   Chen, C H ^a   Lu, T C ^a   Chen, K C ^a   Lu, C Y ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 50349089963     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.43     Document Type: Conference Paper

References (5)

1. J. Lee, et. al., IEEE EDL, pp. 264-266, May 2002.
2. B. Eitan, et. al., IEEE EDL, pp. 543-545, Nov 2000.
3. W.J. Tsai, et. al., IEEE IEDM 2001, pp. 32.6.1-32.6.4, Dec 2001.
4. Y.W. Chang, et. al., IEEE NVSMW, pp. 81-82, Aug 2007.
5. Y.W. Chang, et.al, IEEE EDL, pp. 95-97, Feb 2004.