Synthesis and growth mechanism of Ni nanotubes and nanowires

Nanoscale Research Letters

Volumn 4, Issue 9, 2009, Pages 1015-1020

  Li, Xiaoru ^a   Wang, Yiqian ^a   Song, Guojun ^a   Peng, Zhi ^a   Yu, Yongming ^a   She, Xilin ^a   Li, Jianjiang ^a  

^a QINGDAO UNIVERSITY   (China)

Author keywords

Electrodeposition; Growth mechanism; Nanotubes; Nanowires

Indexed keywords

DEPOSITION TIME; FORMATION MECHANISM; GROWTH MECHANISM; GROWTH MECHANISMS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; METAL NANOSTRUCTURE; NANOWIRE ARRAYS; NI MICROSTRUCTURE; NI NANOTUBE; TEMPLATE-BASED;

CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; ELECTRODEPOSITION; ELECTRON MICROSCOPES; MACHINE DESIGN; NANOTUBES; NICKEL; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 70349984732     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9348-0     Document Type: Article

References (26)

1. N.I. Kovtyukhova, T.E. Mallouk, Chem. Eur. J. 8, 4354 (2002). doi:10.1002/1521-3765(20021004)8:19<4354::AID-CHEM4354>3.0.CO;2-1.
2. F. Patolsky, G. Zheng, O. Hayden, M. Lakadamyali, X. Zhuang, C.M. Lieber, Proc. Natl. Acad. Sci. U.S.A. 104, 14017 (2004). doi:10.1073/pnas.0406159101.
3. M.S. Gudiksen, L.J. Lauhon, J.F. Wang, D.C. Smith, C.M. Lieber, Nature 415, 617 (2002). doi:10.1038/415617a.
4. Y. Cui, Q.Q. Wei, H.K. Park, C.M. Lieber, Science 293, 1289 (2001). doi:10.1126/science.1062711.
5. T. Thurn-Albrecht, J. Schotter, C.A. Kästle, N. Emley, T. Shibauchi, L. Krusin-Elbaum, K. Guarini, C.T. Black, M.T. Tuominen, T.P. Russell, Science 290, 2126 (2000). doi:10.1126/science.290.5499.2126.
6. H.P. Liang, Y.Q. Guo, J.S. Hu, C.F. Zhu, L.J. Wan, C.L. Bai, Inorg. Chem. 44, 3013 (2005). doi:10.1021/ic0500917.
7. C.R. Martin, Science 266, 1961 (1994). doi:10.1126/science.266.5193.1961.
8. C.R. Martin, Chem. Mater. 8, 1739 (1996). doi:10.1021/cm960166s.
9. A. Huczko, Appl. Phys. A 70, 365 (2000). doi:10.1007/s003390051050.
10. K. Peng, Z. Huang, J. Zhu, Adv. Mater. 16, 73 (2004). doi:10.1002/adma.200306185.
11. K.R. Pirota, D. Navas, M. Hernandez-Velez, K. Nielsch, M. Vazquez, J. Alloy Compd. 369, 18 (2004). doi:10.1016/j.jallcom.2003.09.040.
12. F. Tian, J. Zhu, D. Wei, J. Phys. Chem. C 111, 12669 (2007). doi:10.1021/jp0737294.
13. M. Hangarter Carlos, V. Myung Nosang, Chem. Mater. 17, 1320 (2005). doi:10.1021/cm047955r.
14. M.A. Mousa, J. Imran, Alloys Compd. 455, 17 (2008). doi:10.1016/j.jallcom.2007.01.051.
15. J.B. Shi, Y.C. Chen, C.W. Lee, Y.T. Lin, C. Wu, C. Chen, J. Mater. Lett. 62, 15 (2008). doi:10.1016/j.matlet.2007.04.060.
16. H. Pan, B.H. Liu, J.B. Yi, C. Poh, S.H. Lim, J. Ding, Y.P. Feng, C.H.A. Huan, J.Y. Lin, J. Phys. Chem. B 109, 3094 (2005). doi:10.1021/jp0451997.
17. C.G. Jin, W.F. Liu, C. Jia, X.Q. Xiang, W.L. Cai, L.Z. Yao, X.G. Li, J. Cryst. Growth 258, 337 (2003). doi:10.1016/S0022-0248(03)01542-2.
18. D.J. Sellmyer, M. Zheng, R. Skomski, J. Phys.: Condens. Matter 13, R433 (2001).
19. F. Tian, J. Chen, J. Zhu, J. Apply, Phys 103, 013901 (2008).
20. H.Q. Cao, L.D. Wang, Y. Qiu, Q.Z. Wu, G.Z. Wang, L. Zhang, X.W. Liu, ChemPhysChem 7, 1500 (2006). doi:10.1002/cphc.200500690.
21. Q.T. Wang, G.Z. Wang, X.H. Han, X.P. Wang, J.G. Hou, J. Phys. Chem. B 109, 23326 (2005). doi:10.1021/jp0530202.
22. S.K. Hwang, S.H. Jeong, O.J. Lee, K.H. Lee, Microelectron. Eng. 77, 2 (2005). doi:10.1016/j.mee.2004.07.069.
23. Y.C. Sui, B.Z. Cui, L. Marti{dotless}′nez, R. Perez, D.J. Sellmyer, Thin Solid Films 406, 64 (2002). doi:10.1016/S0040-6090(01)01769-2.
24. E.E. Polymeropoulos, J. Appl. Phys. 48, 2404 (1977). doi:10.1063/1.324002.
25. M. Lahav, T. Sehayek, A. Vaskevich, I. Rubinstein, Angew. Chem. 115, 5734 (2003). doi:10.1002/ange.200352216.
26. M. Lahav, T. Sehayek, A. Vaskevich, I. Rubinstein, Angew. Chem. Int. Ed. Engl. 42, 5576 (2003). doi:10.1002/anie.200352216.