Magnetoresistance in Sn-doped In 2O 3 nanowires

Nanoscale Research Letters

Volumn 4, Issue 8, 2009, Pages 921-925

  Berengue, Olívia M ^a   Lanfredi, Alexandre J C ^b   Pozzi, Livia P ^a   Rey, José F Q ^b   Leite, Edson R ^a   Chiquito, Adenilson J ^a  

^a FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^b UNIVERSIDADE FEDERAL DO ABC   (Brazil)

Author keywords

Electron transport; Electron electron scattering; Oxide nanowires; Weak localization

Indexed keywords

ELECTRON TRANSPORT; ELECTRON-ELECTRON SCATTERING; LOW TEMPERATURES; NEGATIVE TEMPERATURES; SN-DOPED; TRANSPORT MEASUREMENTS; WEAK LOCALIZATION;

ELECTRIC RESISTANCE; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; LASERS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MASERS; NANOWIRES; NEGATIVE TEMPERATURE COEFFICIENT; TEMPERATURE; TIN;

ELECTRIC WIRE;

EID: 70349982641     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9336-4     Document Type: Article

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