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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages 2206-2208

Organopalladium catalyst on S-terminated GaAs (001) - (2×6) surface

(5) Konishi, Tomoya a,b Toujyou, Takashi a,b Ishikawa, Takuma a,b Bell, Gavin R a,b Tsukamoto, Shiro a

a ANAN NATIONAL COLLEGE OF TECHNOLOGY (Japan)

b UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION RATES; ATOMIC LAYER; CATALYTIC ACTIVITY; CATALYTIC PROPERTIES; GAAS; GAAS(001); MIZOROKI-HECK REACTION; SCANNING TUNNELING MICROSCOPY (STM); ULTRA-THIN; VAPOR-DEPOSITION TECHNIQUES;

ADSORPTION; GALLIUM ALLOYS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM;

PALLADIUM;

EID: 70349696519 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3193687 Document Type: Article

Times cited : (6)

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