Design ofa novel sensor based on piezo-resistive effect of GaAs/AIGaAs/lnGaAs PHEMT

4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

Volumn , Issue , 2009, Pages 1103-1106

  Cui, Jing ^a   Zhang, Bingzhen ^a   Liu, Jun ^a   Xue, Chengyang ^a   Liu, Guowen ^a   Jial, Xiaojuan ^a  

^a NORTH UNIVERSITY OF CHINA   (China)

Author keywords

Accelerometer; GaAs; NEMS; PHEMT; Piezo resistive

Indexed keywords

GAAS; NANO ELECTROMECHANICAL SYSTEMS; PHEMT; PIEZO-RESISTIVE; SENSITIVE ELEMENTS; TEST RESULTS;

ACCELEROMETERS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; HIGH ELECTRON MOBILITY TRANSISTORS; MINERALS; SEMICONDUCTING GALLIUM;

SENSORS;

EID: 70349673938     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NEMS.2009.5068766     Document Type: Conference Paper

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