Study on subsurface damage model of the ground monocrystallinge silicon wafers

Key Engineering Materials

Volumn 416, Issue , 2009, Pages 66-70

  Zhang, Yinxia ^a   Su, Jianxiu ^b   Gao, Wei ^a   Kang, Renke ^c  

^a ZHENGZHOU UNIVERSITY   (China)

^b HENAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (China)

^c DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Grinding; Silicon wafer; Subsurface damage model

Indexed keywords

AMORPHOUS SILICON; ELASTIC DEFORMATION; GRINDING (MACHINING); MICROCRACKS; SILICON COMPOUNDS;

AMORPHOUS LAYER; DAMAGE MODEL; DUCTILE-MODE; FINE GRINDING; GRINDING MECHANISM; MEASUREMENT METHODS; POLYCRYSTALLINE LAYERS; SUB-SURFACE DAMAGE;

SILICON WAFERS;

EID: 70349670769     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/KEM.416.66     Document Type: Conference Paper

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