40-Gbit/s, uncooled (-15 to 80°C) operation of a 1.55-μm, InGaAlAs, electroabsorption modulated laser for very short reach applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 367-370

  Kobayashi, Wataru ^a   Yamanaka, Takayuki ^a   Arai, Masakazu ^a   Fujiwara, Naoki ^a   Fujisawa, Takeshi ^a   Tsuzuki, Ken ^a   Ito, Toshio ^a   Kondo, Yasuhiro ^a   Kano, Fumiyoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

40 Gbit s; Components; Electroabsorption modulator; InGaAlAs; Laser; Uncooled operation

Indexed keywords

40 GBIT/S; COMPONENTS; DYNAMIC EXTINCTION RATIO; ELECTRO-ABSORPTION MODULATED LASER; INGAALAS; UNCOOLED; UNCOOLED OPERATION; VERY SHORT REACHES;

INDIUM; INDIUM PHOSPHIDE; LASERS; LIGHT ABSORPTION; MODULATION;

ELECTROABSORPTION MODULATORS;

EID: 70349503624     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012444     Document Type: Conference Paper

References (10)

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