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Electronics Letters

Volumn 41, Issue 1, 2005, Pages 35-37

Wide temperature range, from 0 to 85°C, operation of a 1.55 μm, 40 Gbit/s InGaAlAs electro-absorption optical modulator

(4) Arimoto, H a Shimizu, J a Shirai, M a Aoki, M a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DISTRIBUTED FEEDBACK LASERS; OPTICAL COMMUNICATION; OPTICAL FIBERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

OPTICAL SIGNAL; OPTICAL WAVELENGTH; TEMPERATURE DEPENDENCE; THERMAL EXCITATION;

LIGHT MODULATORS;

EID: 12844259523 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20055733 Document Type: Article

Times cited : (30)

References (5)

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2
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- Direct modulation of a distributed feedback laser for 40-Gbit/s very-short-reach optical links
- Paper ThF2
- Sato, K., Kuwahara, S., and Miyamoto, Y: 'Direct modulation of a distributed feedback laser for 40-Gbit/s very-short-reach optical links'. Tech. Dig. Optical Fiber Communication (OFC'2002), 2002, Paper ThF2
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- Sato, K.¹ Kuwahara, S.² Miyamoto, Y.³

3
- 0031109216
- Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser
- Takeuchi, H., Tsuzuki, K., Sato, K., Yamamoto, M., Itaya, Y., Sano, A., Yoneyama, M., and Otsuji, T.: 'Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser', IEEE J. Sel. Top. Quantum Electron., 1997, 3, pp. 336-343
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4
- 84947903710
- Uncooled, 10 Gb/s 1310 nm electroabsorption modulated laser
- Paper PD42-1
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- (2003) Tech. Rig. Optical Fiber Communication (OFC'2003)
- Gokhale, M.R.¹ Stidenkov, P.V.² Ueng-McHale, J.³ Thomson, J.⁴ Yao, J.⁵ Van Saders, J.⁶

5
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- High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules
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