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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

High performance, high temperature λ≈3.7 μm InGaAs/AlAs(Sb) quantum cascade lasers

(5) Commin, J P a Revin, D G a Zhang, S Y a Krysa, A B a Cockburn, J W a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; HIGH PEAK POWER; HIGH TEMPERATURE; LASER CHARACTERISTICS; OPTICAL POWER; STRAIN-COMPENSATED; WALLPLUG EFFICIENCY;

ALUMINUM ARSENIDE; QUANTUM CASCADE LASERS;

LASERS;

EID: 70349501797 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3232219 Document Type: Article

Times cited : (16)

References (7)

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3
- 34547653777
- 0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions
- DOI 10.1063/1.2767767
- D. G. Revin, J. W. Cockburn, M. J. Steer, R. J. Airey, M. Hopkinson, A. B. Krysa, L. R. Wilson, and S. Menzel, Appl. Phys. Lett. 0003-6951 91, 051123 (2007). 10.1063/1.2767767 (Pubitemid 47210773)
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5
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- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperature
- DOI 10.1063/1.115741, PII S0003695196Q07267
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6
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- Values will differ very slightly, such as the center wavelengths as described in the text, though their effect is assumed negligible.
- Values will differ very slightly, such as the center wavelengths as described in the text, though their effect is assumed negligible.

7
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- Role of elastic scattering mechanisms in GaInAs/AlInAs quantum cascade lasers
- DOI 10.1063/1.2361264
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.