Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

Synthetic Metals

Volumn 159, Issue 19-20, 2009, Pages 2034-2037

  Bae, Sang Won ^a   Kim, Kihyun ^a   Han, Yoon Deok ^a   Kim, Sung Hwan ^a   Joo, Jinsoo ^a   Choi, Ji Hoon ^a   Lee, Cheol Jin ^a  

^a Korea University   (South Korea)

Author keywords

Carbon nanotubes composite; Conductivity; Field effect transistor; Percolation threshold; Thin multi walled carbon nanotubes

Indexed keywords

ACTIVE LAYER; CARBON NANOTUBES COMPOSITE; CHARGE CONDUCTION; CONDUCTIVITY; DC CONDUCTIVITY; FIELD-EFFECT; ON/OFF RATIO; P-TYPE; PERCOLATION THRESHOLD; PERCOLATION THRESHOLDS; THIN MULTI-WALLED CARBON NANOTUBES;

CARBON NANOTUBES; CURRENT VOLTAGE CHARACTERISTICS; ESTERS; MESFET DEVICES; MULTIWALLED CARBON NANOTUBES (MWCN); PERCOLATION (COMPUTER STORAGE); PERCOLATION (FLUIDS); PERCOLATION (SOLID STATE); SOLVENTS;

FIELD EFFECT TRANSISTORS;

EID: 70349501601     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.07.017     Document Type: Article

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