Indium-doped zinc oxide nanometre thick disks synthesised by a vapour-phase transport process

Journal of Experimental Nanoscience

Volumn 4, Issue 3, 2009, Pages 243-252

  Tuyen, Nguyen Viet ^a   Long, Nguyen Ngoc ^a   Hoa, Tran Thi Quynh ^b   Nghia, Nguyen Xuan ^c   Chi, Dam Hieu ^a,d   Higashimine, K ^d   Mitani, T ^d   Canh, Ta Dinh ^a  

^a Faculty of Physics   (Viet Nam)

^b NATIONAL UNIVERSITY OF CIVIL ENGINEERING   (Viet Nam)

^c INSTITUTE OF MATERIALS SCIENCE   (Viet Nam)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

In doping; Nanodisk; Photoluminescence; ZnO

Indexed keywords

HEXAGONAL SHAPES; IN-DOPING; INDIUM DOPING; INDIUM METAL; INDIUM-DOPED ZNO; NANODISK; NANODISKS; NANOMETRES; OPTICAL ABSORPTION; POWDER MIXTURES; SEM IMAGE; SINGLE-CRYSTALLINE; THICK DISK; VAPOUR-PHASE; WURTZITE STRUCTURE; ZNO;

DISKS (MACHINE COMPONENTS); DISKS (STRUCTURAL COMPONENTS); DOPING (ADDITIVES); GRAPHITE; INDIUM; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EVAPORATION; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC SULFIDE;

ZINC OXIDE;

INDIUM TIN OXIDE; NANODISC; ZINC OXIDE;

ARTICLE; CHEMICAL STRUCTURE; CONTROLLED STUDY; EVAPORATION; LIGHT ABSORPTION; LIGHT SCATTERING; NANOANALYSIS; NANOIMAGING; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOLUMINESCENCE; PRIORITY JOURNAL; PROCESS DEVELOPMENT; RAMAN SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 70349492167     PISSN: 17458080     EISSN: 17458099     Source Type: Journal    
DOI: 10.1080/17458080802627482     Document Type: Article

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