Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 119-121

  Yamazaki, T ^a   Hirakawa, M ^a   Nakayama, T ^a   Murakami, H ^a  

^a ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROPHOBIC TREATMENT; INTERCONNECT TECHNOLOGY; LOW DIELECTRIC CONSTANTS; LOW-K FILMS; NODE INTERCONNECTS; POROUS SILICA; PRECURSOR SOLUTIONS; SPIN-ON DIELECTRICS; ULTRA LOW-K; ULTRAVIOLET CURING; UV-CURING; YOUNG'S MODULUS;

CURING; SILICA;

DIELECTRIC MATERIALS;

EID: 70349451842     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090358     Document Type: Conference Paper

References (4)

1. N. Fujii et al, Proc. of SPIE, Vol. 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020N-1, 2005.
2. T. Nakayama et al, Proc. of Materials for Advanced Metallization 2006, p.177.
3. M. Hirakawa, S. Asahina, T. Yamazaki, T. Nakayama and H. Murakami, Abst. of Advanced Metallization Conference 2008; Asian Session, p.62.
4. M. Hirakawa, T. Yamazaki, T. Nakayama and H. Murakami, Abst. of Material Research Society 2009, in press.