The effects of growth temperature and substrate tilt angle on GaInP/GaAs tandem solar cells

Journal of Semiconductor Technology and Science

Volumn 9, Issue 2, 2009, Pages 91-97

  Jun, Dong Hwan ^a   Kim, Chang Zoo ^a   Kim, Hogyoung ^b   Shin, Hyun Beom ^a   Kang, Ho Kwan ^a   Park, Won Kyu ^a   Shin, Kisoo ^a   Ko, Chul Gi ^a  

^a Korea Advanced Nano Fab Center (KANC)   (South Korea)

^b Hanbat National University   (South Korea)

Author keywords

GaAs compound semiconductor; Solar cell; Tandem solar cell

Indexed keywords

CARBON; ELECTRIC RESISTANCE; GALLIUM ARSENIDE; GROWTH TEMPERATURE; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SUBSTRATES; TUNNEL DIODES;

BOTTOM CELLS; CARBON DOPING; COMPOUND SEMICONDUCTORS; CURRENT MATCHING; P-TYPE DOPING; SERIES RESISTANCES; SUBSTRATE TILTS; TANDEM SOLAR CELLS;

SOLAR CELLS;

EID: 70349445471     PISSN: 15981657     EISSN: None     Source Type: Journal    
DOI: 10.5573/JSTS.2009.9.2.091     Document Type: Article

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