Characteristics of GaAs solar cells on Ge substrate with a preliminary grown thin layer of AlGaAs

Solar Energy Materials and Solar Cells

Volumn 50, Issue 1-4, 1998, Pages 169-176

  Takahashi, Ken ^a   Yamada, Shigeki ^a   Unno, Tsunehiro ^a   Kuma, Shoji ^a  

^a HITACHI CABLE LTD   (Japan)

Author keywords

AlGaAs; GaAs solar cells; Ge substrate

Indexed keywords

FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

BUFFER LAYER STRUCTURE; MULTIBAND GAP SOLAR CELLS;

SOLAR CELLS;

EID: 0031701872     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00141-4     Document Type: Article

References (5)

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2. Ken Takahashi, Shigeki Yamada, Ryuichi Nakazono, Yasushi Minagawa, Takayuki Matsuda, Tsunehiro Unno, Shoji Kuma, to be presented at 9th Int. Photovoltaic Science and Engineering Conf. 1996.
3. J.P. Benner, Proc. 22nd IEEE Photovoltaic Specialist Conf., 1991, p. 7.
4. C.T. Sah, R.N. Noyce, W. Shockley, Proc. IRE 45 (1957) 1228.
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