InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 4, 2009, Pages 906-909

  Schulz, Wolfgang Michael ^a   Roßbach, Robert ^a   Reischle, Matthias ^a   Beirne, Gareth J ^a   Jetter, Michael ^a   Michler, Peter ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DISCONTINUITIES; BARRIER LAYERS; CONFINEMENT ENERGY; DECAY TIME; ELEVATED TEMPERATURE; GAINP; INP; INTERNAL QUANTUM EFFICIENCY; QUANTUM DOT; TEMPERATURE DEPENDENT; TUNNEL BARRIER;

ALUMINUM; ELECTRON MOBILITY; OPTICAL PROPERTIES; WIND TUNNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349426134     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200880599     Document Type: Conference Paper

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