Investigation of efficiency droop behaviors of InGaN/GaN multiple-quantum-well LEDs with various well thicknesses

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1128-1131

  Li, Yun Li ^a   Huang, Yi Ru ^a   Lai, Yu Hung ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b GENESIS PHOTONICS INC   (Taiwan)

Author keywords

Efficiency droop; InGaN GaN; LED; Multiple quantum well (MQW)

Indexed keywords

ACTIVE REGIONS; AUGER RECOMBINATION; DOMINANT MECHANISM; EXTERNAL QUANTUM EFFICIENCY; HIGH CURRENT DENSITIES; INGAN/GAN; LED; MULTIPLE QUANTUM WELL (MQW); MULTIPLE QUANTUM WELLS; SIMULATION RESULT; WELL STRUCTURE;

AUGERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 70349303384     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2015894     Document Type: Article

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