메뉴 건너뛰기




Volumn 97, Issue 2, 2009, Pages 345-350

Ab initio calculations of yttrium nitride: Structural and electronic properties

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ACTIVE LAYER; BAND GAPS; BAND-GAP SEMICONDUCTORS; ELECTRON EFFECTIVE MASS; ELECTRONIC DEVICE; FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; ROCK SALT; ROCK-SALT STRUCTURE; THREE PHASIS; WURTZITES; ZERO PRESSURE;

EID: 70349272205     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-009-5243-x     Document Type: Article
Times cited : (61)

References (22)
  • 1
    • 70349286507 scopus 로고
    • Cambridge University Press Cambridge
    • V.A. Gubanov, A.L. Ianovsky, V.P. Zhukov, Electronic Structure and Refractory Carbides and Nitrides (Cambridge University Press, Cambridge, 1994)
    • (1994)
    • Gubanov, V.A.1    Ianovsky, A.L.2    Zhukov, V.P.3
  • 20
    • 0007044564 scopus 로고
    • and references therein
    • W. Nakwaski 1995 Physica B 210 1 and references therein
    • (1995) Physica B , vol.210 , pp. 1
    • Nakwaski, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.