Optical properties of Si-doped GaN nanocrystals in SiO2/GaN/ SiO2 thin film structure

Journal of Physics D: Applied Physics

Volumn 42, Issue 13, 2009, Pages

  Das, S N ^a   Bhattacharyya, S R ^a   Gayen, R N ^a   Pal, A K ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED EFFECT; FUSED SILICA SUBSTRATES; INHOMOGENEITIES; MICRO-STRUCTURAL; MULTITARGET; NANOCOMPOSITE FILM; NANOCRYSTALLINES; PHOTOLUMINESCENCE MEASUREMENTS; SEQUENTIAL SPUTTERING; SUBSTRATE TEMPERATURE; SYSTEM PRESSURE; THIN-FILM STRUCTURE; ULTRA-SMALL;

FUSED SILICA; GALLIUM NITRIDE; NANOCOMPOSITES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SILICA; SILICON COMPOUNDS; SUBSTRATES;

COMPOSITE FILMS;

EID: 70349127381     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/13/135402     Document Type: Article

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