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Journal of the American Chemical Society

Volumn 131, Issue 10, 2009, Pages 3412-3413

Photoswitching in azafullerene encapsulated single-walled carbon nanotube FET devices

(4) Yongfeng, Li a,b Kaneko, Toshiro a,b Kong, Jing a,b,c Hatakeyama, Rikizo a,b

a TOHOKU UNIVERSITY (Japan)

b USA (United States)

c MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT PROPERTIES; LIGHT EXPOSURE; PHOTO-INDUCED; PHOTO-INDUCED ELECTRON TRANSFER; PHOTOSWITCHING; SINGLE-WALLED CARBON; SOURCE-DRAIN CURRENT; UV LIGHT;

CARBON NANOTUBES; DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; MESFET DEVICES; TRANSPORT PROPERTIES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

FULLERENE DERIVATIVE; SINGLE WALLED NANOTUBE;

ARTICLE; ELECTRON TRANSPORT; ENCAPSULATION; FIELD EFFECT TRANSISTOR; LIGHT; ROOM TEMPERATURE; SPECTRAL SENSITIVITY;

EID: 70249125860 PISSN: 00027863 EISSN: None Source Type: Journal
DOI: 10.1021/ja810086g Document Type: Article

Times cited : (30)

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