Study of pulsed laser deposited ZnGa2O4 : MMn phosphor thin films in an oxygen controlled environment

Journal of Physics D: Applied Physics

Volumn 42, Issue 15, 2009, Pages

  Thiyagarajan, P ^a   Kottaisamy, M ^b   Rama, N ^a   Ramachandra Rao, M S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b KALASALINGAM UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER BANDS; CONSTANT TEMPERATURE; CONTROLLED ENVIRONMENT; DEPOSITION CONDITIONS; ELECTRONIC TRANSITION; ELEMENTAL COMPOSITIONS; EMISSION INTENSITY; FILM POROSITY; GREEN EMISSIONS; OXYGEN PARTIAL PRESSURE; PHOSPHOR THIN FILMS; PHOTO-LUMINESCENT PROPERTIES; PULSED LASER; PULSED-LASER DEPOSITION TECHNIQUE; QUARTZ SUBSTRATE; SEM IMAGE; SUBSTRATE TEMPERATURE; VAPOUR PRESSURES; ZN CONTENT;

CHARGE TRANSFER; DEPOSITION; FILM GROWTH; ION EXCHANGE; LUMINESCENCE; MANGANESE; MANGANESE COMPOUNDS; OXIDE MINERALS; OXYGEN; PARTIAL PRESSURE; PHOSPHORS; POSITIVE IONS; PULSED LASER DEPOSITION; QUARTZ; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; THREE DIMENSIONAL; VAPOR PRESSURE; ZINC;

LEAKAGE (FLUID);

EID: 70249111196     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/15/155301     Document Type: Article

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