Fabrication of InP HEMT devices with extremely high Fmax

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Lai, R ^a   Deal, W R ^a   Mei, X B ^a   Yoshida, W ^a   Lee, J ^a   Dang, L ^a   Wang, J ^a   Kim, Y M ^a   Liu, P H ^a   Radisic, V ^a   Lange, M ^a   Gaier, T ^b   Samoska, L ^b   Fung, A ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTH; INP HEMT;

HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; MICROWAVE CIRCUITS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 70149093940     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4703057     Document Type: Conference Paper

References (6)

1. Z. Griffith et. al. "Sub 300 nm InGaAs/lnP Type I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fi", Proceedings from IPRM Digest 2007
2. M. Feng et. al. "lnP SHBT with IT over 700 GHz", Proceedings from IPRM Digest 2007
3. A. Tessmann et. ai, "Metamorphic H-Band LowNoise Amplifier MMICs, " Proceedings from IEEE MTT-S International Microwave Symposium Digest, June 2007, Honolulu, HI.
4. R. Lai et al. "lnP HEMT Amplifier Development for G-band (140-220 GHz) Applications", Proceedings from 2001 IEDM Digest, San Francisco
5. M. Gupta, "Power Gain in Feedback Ampliifers, a Classic Revisited", IEEE Transactions on Microwave Theory and Techniques Vol. 40, No.5, May 1992, p 864
6. A.K. Fung et al. "On-wafer vector network analyzer measurements in the 220-325 GHz frequency band," 2006 IEEE MTT-S International Microwave Symposium Digest, pp 1931-1934, 2006