Defect evolution of nanocrystalline SnO2 thin films induced by pulsed delivery during in situ annealing

Acta Materialia

Volumn 57, Issue 17, 2009, Pages 5078-5082

  Chen, Z W ^a,b   Zhang, H J ^a   Li, Z ^a   Jiao, Z ^a   Wu, M H ^a   Shek, C H ^b   Wu, C M L ^b   Lai, J K L ^b  

^a Institute of Nanochemistry and Nanobiology   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Defect; In situ annealing; Pulsed laser deposition; SnO2 thin films

Indexed keywords

DEFECT EVOLUTION; DEFECT-FREE; IN SITU ANNEALING; IN-SITU; MICROSTRUCTURAL DEFECTS; NANOCRYSTALLINES; PERFECT LATTICE; RAMAN SPECTRA; SNO2 THIN FILMS; SOLID STATE GAS SENSORS; TRANSPARENT ELECTRODE;

ANNEALING; CHEMICAL SENSORS; DEFECTS; DEPOSITION; ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LASERS; NANOCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SOLID-STATE SENSORS; STACKING FAULTS; THIN FILMS;

FILM PREPARATION;

EID: 69949174376     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.07.014     Document Type: Article

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