In-Situ atomic-resolution study of stress-induced unusual large strain plasticity of semiconductor nanowires

Microscopy and Microanalysis

Volumn 15, Issue SUPPL. 2, 2009, Pages 1182-1183

  Zhang, Z ^a   Han, X D ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 69949119356     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927609093763     Document Type: Article

References (5)

1. X.D. Han, Z. Zhang and Z.L. Wang, "Experimental nanomechanics of one-dimensional nanomaterials by in situ microscopy" Nano, 2, 249 (2007)
2. X.D. Han, Y.F. Zhang, K. Zheng, X.N. Zhang, and Z. Zhang, Y. J. Hao and X.Y. Guo, J. Yuan and Z. L. Wang, "Low-temperature in situ large strain plasticity of ceramic SiC nanowires and its atomic-scale mechanism" Nano Letters, 7, 452 (2007).
3. X. D. Han, K. Zheng, Y. F. Zhang, X. N. Zhang , Z. Zhang, and Z. L. Wang-"Low-temperature in situ large-strain plasticity of silicon nanowires" Adv. Mater., 19, 2112 (2007).
4. Zhang, YF; Han, XD; Zheng, K; et al., "Direct observation of super-plasticity of beta-SiC nanowires at low temperature", Adv. Func. Mater., 17, 3435 (2007)
5. X.D Han et al., Lattice bending, disordering, and amorphization induced plastic deformation in a SiC nanowire, J. Appl. Phys., 98, 124307 (2005) C