Effects of electronic and nuclear interactions in SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 6, 2009, Pages 976-979

  Audren, A ^a   Monnet, I ^b   Gosset, D ^a   Leconte, Y ^a   Portier, X ^b   Thome L ^c   Garrido, F ^c   Benyagoub, A ^b   Levalois, M ^b   Herlin Boime, N ^a   Reynaud, C ^a  

^a DIF   (France)

^b UNIVERSITÉ DE CAEN   (France)

^c CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Grazing incidence X ray diffraction; Irradiation; Nanostructure; Rutherford Backscattering Spectrometry; SiC; Single crystalline

Indexed keywords

AMORPHIZATION; CRYSTALLINE MATERIALS; ENERGY DISSIPATION; ION BOMBARDMENT; ION IMPLANTATION; IONS; IRRADIATION; NANOSTRUCTURES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; X RAY DIFFRACTION;

ELECTRONIC INTERACTIONS; GRAZING INCIDENCE X-RAY DIFFRACTION; HIGH-ENERGY ION IRRADIATION; LOW ENERGY ION IMPLANTATION; LOW-ENERGY ION IRRADIATION; NUCLEAR AND ELECTRONIC ENERGY LOSS; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SINGLE-CRYSTALLINE;

SILICON CARBIDE;

EID: 69949111150     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.02.033     Document Type: Article

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