Dynamic properties of GaInP multielectrode ridge-waveguide lasers

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 439-442

  Kuhn, J ^a   Vollmer, B ^a   Moritz, A ^a   Heppel, S ^a   Geng, C ^a   Scholz, F ^a   Hangleiter, A ^a   Schweizer, H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; CARRIER CONCENTRATION; ELECTRODES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; WAVEGUIDES;

MULTIELECTRODE RIDGE WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0031120580     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/017     Document Type: Article

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