Fabrication and evaluation of electrical properties of Poly(1,8- diaminonaphthalene) based schottky diode

Iranian Polymer Journal (English Edition)

Volumn 18, Issue 8, 2009, Pages 633-640

  Nateghi, Mohammad R ^a   Mehralian, Fatemeh ^b   Zarandi, Mahmood Borhani ^b   Mosslemin, Mohammad H ^a  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b YAZD UNIVERSITY   (Iran)

Author keywords

1,8 diaminonaphthalene; Band gap; Conducting polymers; Junction properties; Schottky diode

Indexed keywords

1,8-DIAMINONAPHTHALENE; AG ELECTRODE; BAND GAP; BUILT-IN VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; CURRENT VOLTAGE; DIAMINONAPHTHALENE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; GLASS SUBSTRATES; IDEALITY FACTORS; INDIUM TIN OXIDE; INTERFACIAL LAYER; JUNCTION PARAMETERS; JUNCTION PROPERTIES; OPTICAL TRANSMISSIONS; P TYPE SEMICONDUCTOR; POLYMER LAYERS; SCHOTTKY BARRIERS; SCHOTTKY DIODE; SCHOTTKY DIODES; THERMIONIC EMISSION THEORY; WAVELENGTH RANGES;

CAPACITANCE; CARRIER CONCENTRATION; CONDUCTING POLYMERS; CONDUCTIVE PLASTICS; DIODES; ELECTRIC POTENTIAL; ENERGY GAP; GOLD; LIGHT TRANSMISSION; ORGANIC CONDUCTORS; OXIDE FILMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILVER; THERMIONIC EMISSION; TIN; VACUUM; VACUUM DEPOSITION; WORK FUNCTION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69449089273     PISSN: 10261265     EISSN: 10261265     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. Ling QD, Liaw DJ, Zhu C, Chan DSH, Kang ET, Neoh KG, Polymer electronic memories: materials, device and mechanisms, Prog Polym Sci, 33, 917-978, 2008.
2. Moiz SA, Ahmed MM, Karimov, KhS, Rehman F, Lee JH, Space charge limited current-voltage characteristics of organic semiconductor diode fabricated at various gravity conditions, Synth Met, 159, 1336-1339, 2009.
3. Ocak YS, Kulakci M, Kilicoglu T, Turan R, Akkilic K, Current-voltage and capacitance-voltage characteristics of a Sn/methylene blue/p-Si Schottky diode, Synth Met, 159, 1603-1607, 2009.
4. Lous EJ, Blom PWM, Molenkamp LW, Schottky contacts on a highly doped organic semiconductor, Phys Rev, B51, 17251-17254, 1995.
5. Torsi L, Malitesta C, Sabbatini L, Schottky diodes and field-effect transistors based on conjugated thiophenes, Mater Sci Eng, C5, 233-236, 1998.
6. Vardhanan RV, Zhou L, Gao Z, Schottky and heterojunction diodes based on poly(3-octylthio-phene) and poly(3-methylthiophene) films of high tensile strength, Thin Solid Films, 350, 283-288, 1999.
7. Tagmouti S, Outzourhit A, Oueriagli A, Khaidar M, Elyacoubi M, Evrard R, Ameziane EL, Electrical characteristics of W/P3MT/Pt diodes, Thin Solid Films, 379, 272-278, 2000.
8. Saxena V, Santhanam KSV, Junction properties of schottky diode with chemically prepared copolymer having hexylthiophene and cyclohexylthio-phene units, Cur Appl Phys, 3, 227-233, 2003.
9. Liang G, Cui T, Varahramyan K, Fabrication and electrical characteristics of polymer-based schottky diode, Solid-State Electronic, 47, 691-694, 2003.
10. Abdalla TA, Mammo W, Workalemahu B, Electronic and photovoltaic properties of a single layer poly[3-(2′,5′-diheptyloxyphenyl)-2, 2′-bithiophene] devices, Synth Met, 144, 213-219, 2004.
11. Nguyen VC, Kamloth KP, Electrical and chemical sensing properties of doped polypyrrole/gold schottky barrier diodes, Thin Solid Films, 388, 142-148, 1999.
12. Abay B, Onganer Y, Saglam M, Efeoglu H, Türüt A, Yogurtçu YK, Current-voltage and capacitance-voltage characteristics of metallic polymer/InSe(:Er) schottky contacts, Microelectronic Eng, 51-52, 689-693, 2000.
13. Abthagir PS, Sarswathi R, Junction properties of metal/polypyrrole schottky barriers, J Appl Polym Sci, 81, 2127-2135, 2001.
14. Bhadra S, Khastgir D, Singha NK, Lee JH, Progress in preparation, processing and applications of polyaniline, Prog Polym Sci, 34, 783-810, 2009.
15. Gupta RK, Singh RA, Schottky diode based on composite organic semiconductors, Mater Sci Semicond Proc, 7, 83-87, 2004.
16. Gupta RK, Singh RA, Fabrication and characteristics of schottky diode based on composite organic semiconductors, Compos Sci Tech, 65, 677-681, 2005.
17. Huang LM, Wen TC, Gopalan A, Electronic and junction properties of poly(2,5-dimethoxyani-line)-polyethylene oxide blend/metal schottky diodes, Thin Solid Films, 473, 300-307, 2005.
18. Abthagir PS, Sarswathi R, Rectifying properties of poly(N-methylaniline), J Mater Sci Mater Electron, 15, 81-86, 2004.
19. Shacklette LW, Elsenbaumer RL, Chance RR, Sowa JM, Ivory DM, Miller GG, Baughman R, Electrochemical doping of poly(p-phenylene) with application to organic batteries, J Chem Soc Chem Commun, 361-362, DOI: 10.1039/ C39820000361, 1982.
20. Bagheri A, Nateghi MR, Electrode kinetics and electrochemical properties of poly(1,8-diaminon-aphthalene) modified electrodes in aqueous acid solutions, Ind J Chem, 37A, 606-612, 1998.
21. Lee JW, Park DS, Shim YB, Electrochemical characterization of poly(1,8-diaminonaphtha-lene): a functionalized polymer, Electrochem Soc, 139, 3507-3514, 1992.
22. Li XG, Huang MR, Duan W, Novel multifunctional polymers from aromatic diamines by oxidative polymerizations, Chem Rev, 102, 2925-2930, 2002.
23. Palys BJ, Skompska M, Jakowska K, Sensitivity of poly 1,8-diaminonaphthalene to heavy metal ions electrochemical and vibrational spectra studies, J Electroanal Chem, 433, 41-48, 1997.
24. Nasalska A, Skompska M, Removal of toxic chromate ions by the pilms of poly(1,8-diaminon-aphthalene), J Appl Electrochem, 33, 113-119, 2003.
25. Nateghi MR, Kalantari F, Theoretical stydy of 1,8-diaminonaphthalene polymerization, Proc Int Conf Comput Meth Sci Eng 2007, Corfu, Greece, 25th-30th Sep, 2007.