In situ study of the metal-insulator transition in VO2 by EELS and ab initio calculations

Micron

Volumn 40, Issue 8, 2009, Pages 787-792

  Espinosa Magana F ^a   Rosas, Alberto ^b   Esparza Ponce, H E ^a   Ochoa Lara, M T ^a   Aguilar Elguezabal, A ^a  

^a CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS   (Mexico)

^b Parque Industrial Lerma   (Mexico)

Author keywords

ab initio; Dielectric function; EELS; Electronic structure; VO2

Indexed keywords

AB INITIO; AB INITIO CALCULATIONS; CHARACTERISTIC PEAKS; DENSITY-FUNCTIONAL THEORY CALCULATIONS; DIELECTRIC FUNCTION; EELS; EELS SPECTRA; ELECTRON ENERGY-LOSS SPECTROSCOPIES; ENERGY BAND STRUCTURE; GENERALIZED GRADIENT APPROXIMATIONS; IN-SITU; IN-SITU STUDY; INSULATOR PHASE; LOSS FUNCTIONS; LOW LOSS; METALLIC PHASE; ROOM TEMPERATURE; THERMO-CHROMIC; TRANSMISSION ELECTRON MICROSCOPE; VO2;

AUGER ELECTRON SPECTROSCOPY; DENSITY FUNCTIONAL THEORY; DIELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSMISSION ELECTRON MICROSCOPY; WAVE FUNCTIONS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 69349105174     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2009.07.007     Document Type: Article

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