A 90-W peak power GaN outphasing amplifier with optimum input signal conditioning

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 8, 2009, Pages 1925-1935

  Qureshi, Jawad H ^a   Pelk, Marco J ^a   Marchetti, Mauro ^a   Neo, W C Edmund ^b   Gajadharsing, John R ^b   Van Der Heijden, Mark P ^c   De Vreede, L C N ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Innovation Centre RF   (Netherlands)

^c NONE   (Netherlands)

Author keywords

Base station; High efficiency RF power amplifier; Mixed mode amplifier; Outphasing amplifier; Wideband code division multiple access (W CDMA)

Indexed keywords

BASE-STATION; CDMA SIGNALS; HIGH EFFICIENCY; HIGH-EFFICIENCY RF POWER AMPLIFIER; IN-PHASE/QUADRATURE; INDEPENDENT CONTROL; INPUT POWER; INPUT SIGNAL; LOW-COMPLEXITY; MIXED-MODE AMPLIFIER; MULTIBAND; OPTIMUM DESIGN PARAMETERS; OPTIMUM INPUT SIGNALS; OUTPHASING; OUTPHASING AMPLIFIER; OUTPUT POWER LEVELS; OUTPUT STAGES; PEAK POWER; POWER BACKOFF; POWER LEVELS; PRE-DISTORTION; REACTIVE LOADING; WIDEBAND CODE DIVISION MULTIPLE ACCESS; WIDEBAND CODE DIVISION MULTIPLE ACCESS (W-CDMA);

BASE STATIONS; CODE DIVISION MULTIPLE ACCESS; FORCE MEASUREMENT; GALLIUM ALLOYS; GALLIUM NITRIDE; LINEARIZATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; STRAIN MEASUREMENT; WIRELESS TELECOMMUNICATION SYSTEMS;

BROADBAND AMPLIFIERS;

EID: 69249221236     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2025430     Document Type: Article

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