De Haas-van Alphen effect and fermi surface properties in high-quality single crystals YbCu 2Si 2 and YbCu 2Ge 2

Journal of the Physical Society of Japan

Volumn 78, Issue 8, 2009, Pages

  Dung, Nguyen Duc ^a,b   Matsuda, Tatsuma D ^b   Haga, Yoshinori ^b   Ikeda, Shugo ^b   Yamamoto, Etsuji ^b   Ishikura, Tatsuro ^a   Endo, Toyoaki ^a   Tatsuoka, Sho ^c   Aoki, Yuji ^c   Sato, Hideyuki ^c   Takeuchi, Tetsuya ^a   Settai, Rikio ^a   Harima, Hisatomo ^d   Onuki, Yoshichika ^a,d  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c TOKYO METROPOLITAN UNIVERSITY   (Japan)

^d KOBE UNIVERSITY   (Japan)

Author keywords

Dhva effect; Energy band structure; Fermi surface; Heavy fermions; LuCu 2Si 2; Single crystal growth; YbCu 2Ge 2; YbCu 2Si 2; YCu 2Si 2

Indexed keywords

EID: 69249142725     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/JPSJ.78.084711     Document Type: Article

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