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Journal of the Physical Society of Japan

Volumn 74, Issue 5, 2005, Pages 1552-1556

Electrical and magnetic properties of a single crystal UCu 2Si2

(19) Matsuda, Tatsuma D a Haga, Yoshinori a Ikeda, Shugo a,b Galatanu, Andrei a Yamamoto, Etsuji a Shishido, Hiroaki b Yamada, Mineko b Yamaura, Jun Ichi c Hedo, Masato c Uwatoko, Yoshiya c Matsumoto, Takuya d Tada, Toshiya d Noguchi, Satoru d Sugimoto, Toyonari d Kuwahara, Keitaro e Iwasa, Kazuaki e Kohgi, Masahumi e Settai, Rikio b Onuki, Yoshichika a,b

a JAPAN ATOMIC ENERGY AGENCY (Japan)

b OSAKA UNIVERSITY (Japan)

c UNIVERSITY OF TOKYO (Japan)

d Osaka City University (Japan)

e TOKYO METROPOLITAN UNIVERSITY (Japan)

Author keywords

Flux method; Ising type ferromagnetism; Single crystal growth; UCu2Si2

Indexed keywords

COPPER COMPLEX; SILICON DERIVATIVE;

ANISOTROPY; ARTICLE; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC RESISTANCE; MAGNETISM; TEMPERATURE SENSITIVITY;

EID: 20444380987 PISSN: 00319015 EISSN: None Source Type: Journal
DOI: 10.1143/JPSJ.74.1552 Document Type: Article

Times cited : (29)

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