Raman and infrared spectroscopic study of the defect spinel In 21.333S32

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 2, Issue 6, 2008, Pages 356-359

  Tao, Haizheng ^a   Zang, Haochun ^a   Dong, Guoping ^a   Zeng, Jianmin ^b   Zhao, Xiujian ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b Guangxi Key Laboratory for the Advanced Materials and New Preparation Technologies   (China)

Author keywords

In2S3; Infrared spectroscopy; Raman spectroscopy

Indexed keywords

DEFECTS; INDIUM SULFIDE; INFRARED SPECTROSCOPY; RAMAN SPECTROSCOPY; SPECTROSCOPIC ANALYSIS;

IN2S3; INFRARED SPECTROSCOPIC STUDIES; MICROSTRUCTURAL FEATURES; POLARIZED RAMAN SPECTRA; RAMAN AND INFRARED SPECTRA; RANDOM DISTRIBUTION; SPECTROSCOPIC CHARACTERIZATION; SYMMETRIC STRETCHING;

INDIUM METALLOGRAPHY;

EID: 69249107818     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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